IEEE

A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT

Abstract: This work presents a physics-based 1-D equivalent-circuit model (ECM) for an AlGaN/GaN HEMT. For that, it starts with the thorough derivation of an analytical 1-D model from a 2-D ...
IEEE

A Space Mapping Augmented Compact Model for Uncertainty Quantification of GaN HEMT Devices and Circuits in the Presence of Trap Effects

Abstract: In this article, an artificial neural network (ANN) augmented compact model is developed for the fast uncertainty quantification (UQ) of GaN high electron mobility transistors (HEMTs). The ...