We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact.

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A two-dimensional electron gas (2DEG) was formed at the interface of an ultrathin Al2O3/TiO2 heterostructure that was fabricated using atomic layer deposition (ALD) at a low temperature (<300 °C) on a ...