It’s not easy to transfer arrays of incredibly small, vertical GaN-based microLEDs to another platform. But there is a promising solution: selective-area growth of these emitters on hexagonal boron ...

For future space missions, makers of electrical systems need better power devices, a requirement that’s met by SiC.

US-based company NS Nanotech has increased the power output of its far-UVC ShortWaveLight 215 semiconductor emitter by more ...

Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

The devil in the defects Unfortunately, unlocking the promise of SiC demands addressing a number of key challenges. A major one is an imperfect interface between SiC and SiO 2 that prevents SiC ...

The US Northeast Microelectronics Coalition (NEMC) Hub has announced $1,432,373 in awards to 19 startups and small businesses ...

British mmWave technology company Filtronic will play an important role in the European Space Agency (ESA) and Viasat’s ...

Queensland University of Technology (QUT) researchers have identified a new material which could be used as a flexible ...

Infineon is mainly targeting the two market with its expanding portfolio of 2 kV power devices: the solar sector and the ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

Toyoda Gosei has unveiled a full-colour InGaN monolithic microLED display produced by stacking and selective removal of light-emitting layers. This breakthrough builds on this company’s development of ...