News

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...
Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...
Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...
Once emerged from the process, Wolfspeed says it expects to have reduced its overall debt by approximately 70 percent, representing a reduction of approximately $4.6 billion and a reduction of its ...
Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...
Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...
ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...
Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...
Company introduces portfolio of products and reference designs around 30V to 120V bi-directional GaN platform Battery Management Systems (BMS) are the central intelligence of modern energy storage, ...
Engineers from King Abdullah University of Science and Technology are claiming to have unveiled the first Ga 2 O 3 transistors grown on GaN-on-silicon. When considering the various material options ...
Company introduces portfolio of products and reference designs around 30V to 120V bi-directional GaN platform Battery Management Systems (BMS) are the central intelligence of modern energy storage, ...