News

IEEE3d
Low internal loss InP/InGaAsP laser diodes fabricated using inductively coupled plasma etching - IEEE Xplore
Inductively coupled plasma (ICP) etching technique was applied to fabricate high power InP/InGaAsP buried-hetero structure laser diodes. Low internal losses of 6 cm/sup -1/ and internal quantum ...
IEEE5d
Performance and reliability of high power, high brightness 8xx-9xx nm semiconductor laser diodes | IEEE Conference Publication | IEEE Xplore
High-power and high-reliability single emitter laser diodes with 8xx-9xx nm lasing wavelength based on Asymmetric Decoupled Confinement Heterostructure (ADCH) are demonstrated. Laser structure ...