In this paper, an n-p-n collector incorporated in the back side of a 4H-SiC trench IGBT is presented to reduce the turn-off energy loss. A comparative study between the proposed structure and the ...

This paper presents the two-dimensional (2-D) numerical simulation results of heavy-ion induced reverse drain current degradation and single-event burnout (SEB) in the 1.2-kV rated CoolSiC Trench ...